t4 - lds -0 150 -1, rev 1 (1 0/9/13 ) ?201 3 microsemi corporation page 1 of 4 2 n4 261 ub compliant available pnp small signal silicon transistor qualified per mil -prf- 19500/511 qualified levels : jan, jantx, jantxv and jans description th is 2n4261 ub small signal transistor features ceramic bodied construction with a metal li d for military grade products per mil - prf - 19500/511 . it is also available with a ceramic lid in the ubc package or in a hermetically sealed metal to - 72 package . ub package also available in : ubc package (c eramic lid surface mount) 2N4261UBc to - 72 package ( leaded ) 2n4261 important: for the latest info rmation, visit our website http://www.microsemi.com . features ? surface mount equivalent of p opular jedec registered 2n4261 number ? j an, jantx, jantxv and jans qualification is available per mil - prf - 19500/511 (s ee part nomenclature for all available options .) ? rohs compliant applications / benefits ? low - profile ceramic bodied surface mount package (see package illustration) ? lightweight ? military and other high - reliability applic ations m axim um ratings @ t a = 25 oc msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com p arameters/test conditions symbol value unit junction and storage temperature t j & t stg - 65 to + 200 o c thermal resistance junction - to - ambient (1) r ? ja 0.860 o c /w collector C emitter v oltage v ceo - 15 v collector C base voltage v cbo - 15 v emitter - base voltage v ebo - 4.5 v total power dissipation (1) @ t a = +25 oc (1) @ t c = +25 oc (2 ) p t 0.2 w collector current i c - 30 ma notes: 1. derate line arly 1.14 mw/c above t a = +25c downloaded from: http:///
t4 - lds -0 150 -1, rev 1 (1 0/9/13 ) ?201 3 microsemi corporation page 2 of 4 2 n4 261 ub mechanical and packaging ? case: ceramic ? terminals: gold p lating over n ickel under plate ? marking: part numbe r, date code, manufacturers id ? tape & reel option: standard per eia - 418d . consult factory for quantities. ? w eight: less than 0.04 g rams ? see p ackage di mensions on last page. part nomenclature jan 2n4261 ub reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = c ommercial grade surface mount package jedec type number (see electrical characteristics table) symbols & definitions symbol definition i b base current: the value of the dc current in to the base terminal. i c collector cu rrent: the value of the dc current in to the collector terminal. v cb collector - base voltage: the dc voltage between the collector and the base. v cb o collector - base voltage, base open : the voltage between the collector and base terminals when the emitte r terminal is open - circuited . v ce collector - emitter voltage: the dc voltage between the collector and the emitter. v ce o collector - emitter voltage, base open : the voltage between the collector and the emitte r terminals when the base terminal is open - cir cuited. v cc collector - supply voltage: the supply voltage applied to a circuit connected to the collector. v eb o emitter - base voltage, collector open : the voltage between the emitter and base terminals with the collector terminal open - circuited. v eb emi tter - base voltage: the dc voltage between the emitter and the base downloaded from: http:///
t4 - lds -0 150 -1, rev 1 (1 0/9/13 ) ?201 3 microsemi corporation page 3 of 4 2 n4 261 ub electrical characteristics @ 25 oc unless otherwise noted parameters / test conditions symbol min max unit off character is tics collector - emitter breakdown voltage i c = - 10 ma v (br)ceo - 15 v collector - base cutoff current v cb = - 15 v i cbo - 10 a emitter - base cutoff current v eb = - 4.5 v i ebo - 10 a collector - emitter cutoff current v ce = - 10 v, v be = - 0.4 v v ce = - 10 v, v be = - 2.0 v i cex - 50 -5 na na on characteristics (1) forward -c urrent transfer ratio h fe i c = - 1.0 ma, v ce = -1 .0 v 25 i c = - 10 ma, v ce = -1 .0 v 30 150 i c = - 30 ma, v ce = -1 .0 v 20 collector - emitter saturation voltage v ce(sat) v i c = -1 .0 ma, i b = - 0.1 ma i c = - 10 ma, i b = - 1.0 ma - 0.15 - 0.35 base - emitt er saturation voltage (non - saturated) v be v v ce = -1 .0 v, i c = -1 .0 ma v ce = -1 .0 v, i c = - 10 ma - 0.8 - 1.0 dynamic characteristics parameters / test conditions symbol min max unit magnitude of small C signal forward current transfer ratio |h fe | i c = - 5.0 ma, v ce = 4. 0 v, f = 100 mhz i c = - 10 ma, v ce = 10 v, f = 100 mhz 15 20 output capacitance c obo 2.5 pf v cb = -4 v, i e = 0, 100 khz f 1.0 mhz input capacitance c ibo 2.5 pf v eb = - 0.5v, i c = 0, 100 khz f 1.0 mhz switching characte ristics parameters / test conditions symbol min max unit turn - on time v cc = - 17 v; i c = - 10 ma t on 2.5 ns turn - off time v cc = - 17 v; i c = - 10 ma t off 3.5 ns (1 ) pulse test: p ulse w idth = 300 s, d uty c ycle 2.0% downloaded from: http:///
t4 - lds -0 150 -1, rev 1 (1 0/9/13 ) ?201 3 microsemi corporation page 4 of 4 2 n4 261 ub package dimensions symbol dime nsions note symbol dimensions note inch millimeters inch millimeters min max min max min max min max bh 0 .046 .056 1.17 1.42 ls1 0 .035 0 .039 0.89 0.99 bl 0 .115 0 .128 2.92 3.25 ls2 0 .071 0 .079 1.80 2.01 bw 0 .085 0 .108 2.16 2.74 lw 0 .0 16 0 .0 24 0.41 0.61 cl - 0 .128 - 3.25 r - 0 .008 - 0.20 cw - 0 .108 - 2.74 r1 - 0 .012 - 0.31 ll1 0 .022 0 .038 0.56 0.97 r2 - 0 .022 - .056 ll2 0 .017 0 .035 0.43 0.89 not es: 1 . dimen sio ns are in in ch es . m illim ete rs a re gi ven fo r in for ma t io n onl y. 2. ceramic package o nly. 3 . hat che d areas on pack ag e deno te metal li zed area s. 4 . pad 1 = b ase , pad 2 = emi tt e r, pad 3 = c ol l ec to r, pad 4 = s hi e ldi ng c on n ec ted to the li d. 5 . in ac co rd an ce wi th as me y 14 .5m, diame ters a re eq uival en t to x sy mbolog y. downloaded from: http:///
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